MOSFET circuit to measure transconductance

ER

Eric-Stimpson

·

Created Oct 6, 2026

·

Updated Oct 6, 2026

Schematic preview for MOSFET circuit to measure transconductance
Details

Components

4


Schematic

Yes


Simulation

Interactive operating point


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Components used

Components used
4 components
NameManufacturerMPNCountType

Resistor

Generic

—

2

Official

2N7000

ON Semiconductor

2N7000G

1

Official

DC Voltage Source

Generic

—

1

Official

DC Voltage Source

Generic

—

1

Official

SPICE netlist

* **************************************************
* Generated from CircuitSim Schematic
**************************************************
xQ1 N6 N1 N4 Param2N7000ON_3a210cad
R_R1 N2 N1 1meg Resistor_1d9c8cf9a__R_R1
R_Rs 0 N4 300 Resistor_1d9c8cf9a__R_Rs
V_V1 N2 0 DC 1 AC 0 0 distof1 0 0 distof2 0 0
V_Vds N5 0 dc 15 ac 0 0 distof1 0 0 distof2 0 0
E_VP1 VP1 0 N4 0 1
E_VP2 VP2 0 N1 0 1
V_IP1 N5 N6 0

**************************************************
* Models and supporting definitions follow
**************************************************
.subckt Param2N7000ON_3a210cad D G S
    XADAPTER D G S Param2N7000ON_3a210cad_SOURCE
.ENDS Param2N7000ON_3a210cad
.MODEL Param2N7000ON_3a210cad_MM NMOS LEVEL=1 IS=1e-32
+VTO=2.236 LAMBDA=0 KP=0.0932174
+CGSO=1.79115e-07 CGDO=1.0724e-11
.MODEL Param2N7000ON_3a210cad_MD D IS=2.71011e-10 RS=0.0140826 N=1.5 BV=60
+IBV=1e-05 EG=1.16084 XTI=3.00131 TT=0
+CJO=3.41211e-11 VJ=4.67429 M=0.899864 FC=0.1
.MODEL Param2N7000ON_3a210cad_MD1 D IS=1e-32 N=50
+CJO=7.93181e-11 VJ=0.643298 M=0.9 FC=1e-08
.MODEL Param2N7000ON_3a210cad_MD2 D IS=1e-10 N=0.400165 RS=3.00002e-06
.MODEL Param2N7000ON_3a210cad_MD3 D IS=1e-10 N=0.400165
.subckt Param2N7000ON_3a210cad_SOURCE 1 2 3
    **************************************
    * Model Generated by MODPEX *
    *Copyright(c) Symmetry Design Systems*
    * All Rights Reserved *
    * UNPUBLISHED LICENSED SOFTWARE *
    * Contains Proprietary Information *
    * Which is The Property of *
    * SYMMETRY OR ITS LICENSORS *
    *Commercial Use or Resale Restricted *
    * by Symmetry License Agreement *
    **************************************
    * Model generated on Mar 31, 04
    * MODEL FORMAT: PSpice
    * Symmetry POWER MOS Model (Version 1.0)
    * External Node Designations
    * Node 1 -> Drain
    * Node 2 -> Gate
    * Node 3 -> Source
    M1 9 7 8 8 Param2N7000ON_3a210cad_MM L=100u W=100u
    * Default values used in MM:
    * The voltage-dependent capacitances are
    * not included. Other default values are:
    * RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
    RS 8 3 1.10523
    D1 3 1 Param2N7000ON_3a210cad_MD
    RDS 3 1 2.4e+11
    RD 9 1 0.0001
    RG 2 7 2.18034
    D2 4 5 Param2N7000ON_3a210cad_MD1
    * Default values used in MD1:
    * RS=0 EG=1.11 XTI=3.0 TT=0
    * BV=infinite IBV=1m
    D3 0 5 Param2N7000ON_3a210cad_MD2
    * Default values used in MD2:
    * EG=1.11 XTI=3.0 TT=0 CJO=0
    * BV=infinite IBV=1m
    RL 5 10 1
    FI2 7 9 VFI2 -1
    VFI2 4 0 0
    EV16 10 0 9 7 1
    CAP 11 10 1.58786e-10
    FI1 7 9 VFI1 -1
    VFI1 11 6 0
    RCAP 6 10 1
    D4 0 6 Param2N7000ON_3a210cad_MD3
    * Default values used in MD3:
    * EG=1.11 XTI=3.0 TT=0 CJO=0
    * RS=0 BV=infinite IBV=1m
.ENDS Param2N7000ON_3a210cad_SOURCE
.model Resistor_1d9c8cf9a__R_R1 r(tc1=0 tc2=0 tnom=27)
.model Resistor_1d9c8cf9a__R_Rs r(tc1=0 tc2=0 tnom=27)

**************************************************
* Simulation settings
**************************************************
.op
.save V(VP1) V(VP2) I(V_IP1)
.end

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