scr

Components used

SPICE netlist

* **************************************************
* Generated from CircuitSim Schematic
**************************************************
X_D1 N3 N4 0 MCR08MT1ON_ef049519
R_R1 N3 N2 3K Resistor_1d9c8cf9a__R_R1
R_RV1_A N2 N4 'max(1m,20K*50/100)'
R_RV1_B N4 N4 'max(1m,20K*(100-50)/100)'
rU1 N1 N3 '12*12/1.2'
V_V1 N1 0 dc 0 ac 1 0 distof1 0 0 distof2 0 0 sin ( 0 115 60 0 0 0 )

**************************************************
* Models and supporting definitions follow
**************************************************
.MODEL MCR08MT1ON_ef049519_Vswitch SW(Ron={(1.4-0.7)/1.0} Roff={600*600/(1.4*2.5m)} Vt={(5.0+1.5)/2} Vh={(5.0-1.5)*0.499})
.MODEL MCR08MT1ON_ef049519_Dgk D (Is=1E-16 Cjo=50pf Rs=5)
.MODEL MCR08MT1ON_ef049519_Dseries D (Is=1E-14)
.MODEL MCR08MT1ON_ef049519_Delay D (Is=1E-12 Cjo=5pf Rs=0.01)
.MODEL MCR08MT1ON_ef049519_Dkarev D (Is=1E-10 Cjo=5pf Rs=0.01)
.MODEL MCR08MT1ON_ef049519_Dakfwd D (Is=4E-11 Cjo=5pf)
.MODEL MCR08MT1ON_ef049519_Dbreak D (Ibv=1E-7 Bv={1.1*600} Cjo=5pf Rs=0.5)
*$
.subckt MCR08MT1ON_ef049519 anode gate cathode PARAMS:
    **************************************
    * Model Generated by EVAL LAB *
    * July 23, 2003 *
    * Copyright(c) On Semiconductor *
    * All Rights Reserved *
    *Commercial Use or Resale Restricted *
    **************************************
    *SCR
    *MODEL FORMAT: PSpice
    .param Vdrm=600 Vrrm=600 Idrm=10u
    .param Ih=2.5m dVdt=10e6
    * Vgt must be greater than 0.65
    .param Igt=6.5u Vgt=0.66
    .param Vtm=1.4 Itm=1.0
    .param Ton=2u Toff=15u

    * Where:
    * Vdrm => Forward breakover voltage
    * Vrrm => Reverse breakdown voltage
    * Idrm => Peak blocking current
    * Ih => Holding current
    * dVdt => Critical value for dV/dt triggering
    * Igt => Gate trigger current
    * Vgt => Gate trigger voltage
    * Vtm => On-state voltage
    * Itm => On-state current
    * Ton => Turn-on time
    * Toff => Turn-off time

    * Main conduction path
    Scr anode anode0 control 0 MCR08MT1ON_ef049519_Vswitch ; controlled switch
    Dak1 anode0 anode2 MCR08MT1ON_ef049519_Dakfwd OFF ; SCR is initially off
    Dka cathode anode0 MCR08MT1ON_ef049519_Dkarev OFF
    VIak anode2 cathode ; current sensor

    * dVdt Turn-on
    Emon dvdt0 0 TABLE {v(anode,cathode)} (0 0) (2000 2000)
    CdVdt dvdt0 dvdt1 100p ; displacement current
    Rdlay dvdt1 dvdt2 1k
    VdVdt dvdt2 cathode DC 0.0
    EdVdt condvdt 0 TABLE {i(vdVdt)-100p*dVdt} (0 0 ) (.1m 10)
    RdVdt condvdt 0 1meg

    * Gate
    Rseries gate gate1 {(Vgt-0.65)/Igt}
    Rshunt gate1 gate2 {0.65/Igt}
    Dgkf gate1 gate2 MCR08MT1ON_ef049519_Dgk
    VIgf gate2 cathode ; current sensor

    * Gate Turn-on
    Egate1 gate4 0 TABLE {i(Vigf)-0.95*Igt} (0 0) (1m 10)
    Rgate1 gate4 0 1meg
    Egon1 congate 0 TABLE {v(gate4)*v(anode,cathode)} (0 0) (10 10)
    Rgon1 congate 0 1meg

    * Main Turn-on
    EItot Itot 0 TABLE {i(VIak)+5E-5*i(VIgf)/Igt} (0 0) (2000 2000)
    RItot Itot 0 1meg
    Eprod prod 0 TABLE {v(anode,cathode)*v(Itot)} (0 0) (1 1)
    Rprod prod 0 1meg
    Elin conmain 0 TABLE
    + {10*(v(prod) - (Vtm*Ih))/(Vtm*Ih)} (0 0) (2 10)
    Rlin conmain 0 1meg

    * Turn-on/Turn-off control
    Eonoff contot 0 TABLE
    + {v(congate)+v(conmain)+v(condvdt)} (0 0) (10 10)

    * Turn-on/Turn-off delays
    Rton contot dlay1 825
    Dton dlay1 control MCR08MT1ON_ef049519_Delay
    Rtoff contot dlay2 {290*Toff/Ton}
    Dtoff control dlay2 MCR08MT1ON_ef049519_Delay
    Cton control 0 {Ton/454}

    * Reverse breakdown
    Dbreak anode break1 MCR08MT1ON_ef049519_Dbreak
    Dbreak2 cathode break1 MCR08MT1ON_ef049519_Dseries

    * Controlled switch model

    * Diodes

    * Allow the gate to float if required
    Rfloat gate cathode 1e10

.ENDS
.model Resistor_1d9c8cf9a__R_R1 r(tc1=0 tc2=0 tnom=27)

**************************************************
* Simulation settings
**************************************************
.tran 333u 100m 0 333u
.save @rU1[p]
.end