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SPICE netlist

* COE 302 - TP Hacheur Serie (Buck) - Seance 4
* Groupe: ELADLY Moataz, CHIMAITILLY Mustafa, CIFTCI Yigit
* Simulation du hacheur reel (f = 30 kHz, alpha = 50%, E = 30 V)

* --- Source d'alimentation continue ---
V1 in 0 DC 30

* --- Condensateurs de decouplage d'entree (TP4 Schéma p.8) ---
C_in1 in 0 560u
C_in2 in 0 1u

* --- Commande de grille du MOSFET (PULSE 30 kHz, alpha = 50%) ---
* PULSE(Voff Von Tdelay Trise Tfall Ton Tperiod)
Vgate gate 0 PULSE(0 15 0 10n 10n 16.667u 33.333u)
Rgate_source gate 0 1k

* --- Transistor MOSFET IRF630 (RdsON = 0.323 Ohm mesure au TP1) ---
* M1 Drain Gate Source Substrat
M1 in gate mid 0 IRF630_REAL
.model IRF630_REAL VDMOS(Rg=5 Vto=3.5 Rd=0.323 Rs=0.01 Cgs=700p Cgd=100p)

* --- Diode Schottky de roue libre MBR10150 (V0 = 0.44 V, Rd = 0.25 Ohm TP1) ---
D1 0 mid MBR10150_REAL
.model MBR10150_REAL D(Is=1e-7 Rs=0.250 N=1.05 Vj=0.440 Bv=150)

* --- Inductance reelle fabriquee au TP3 (L = 1106.9 uH, RL = 0.35 Ohm) ---
L1 mid out 1106.9u Rser=0.35

* --- Condensateur de filtrage de sortie calcule (C = 2.2 uF, Q3) ---
* Commenter la ligne suivante pour la question 2 (Sans condensateur) :
C_filter out 0 2.2u

* --- Resistance de charge (R = 10 Ohm) ---
Rload out 0 10

* --- Directive de simulation transitoire ---
* .tran [Tstop] [Tstart_saving] [MaxStep]
* On simule 2 ms et on enregistre de 1.8 ms a 2.0 ms (regime permanent)
.tran 0 2m 1.8m 10n

* --- Directives de mesure automatique LTspice ---
.meas tran Vs_moy AVG V(out)
.meas tran Delta_Vs PP V(out)
.meas tran IL_moy AVG I(L1)
.meas tran Delta_IL PP I(L1)

.backanno
.end