Diode

IS

Saturation current

Diode saturation current.

1e-14 A

RS

Series resistance

Ohmic resistance in series with the diode junction.

0 ohm

N

Emission coefficient

Emission coefficient for the diode equation.

1

BV

Reverse breakdown voltage

Reverse voltage where breakdown current is specified.

1e30 V

IBV

Breakdown current

Reverse current at the breakdown voltage.

100p A

CJO

Zero-bias junction capacitance

Junction capacitance at zero bias.

0 F

VJ

Junction potential

Junction potential used by the depletion capacitance model.

1 V

M

Grading coefficient

Junction grading coefficient.

0.5

FC

Forward-bias depletion coefficient

Coefficient for forward-bias depletion capacitance.

0.5

TT

Transit time

Transit time for charge storage effects.

0 s

EG

Energy gap

Semiconductor energy gap.

1.11 eV

XTI

Saturation-current temperature exponent

Temperature exponent for saturation current.

3

TNOM

Nominal temperature

Nominal temperature for model parameter extraction.

27 degC

TEMP

Instance temperature

Operating temperature for this diode instance.

27 degC

KF

Flicker noise coefficient

Flicker noise coefficient.

0

AF

Flicker noise exponent

Flicker noise exponent.

1

IC

Initial junction voltage

Initial junction voltage used by transient operating-point setup.

0 V

ISR

Recombination saturation current

Recombination saturation current.

0 A

NR

Recombination emission coefficient

Emission coefficient for recombination current.

2

IKF

High-injection knee current

Forward high-injection knee current.

1e30 A