SiHB33N60E

Official

Transistors

·

Vishay — SiHB33N60E-GE3

·

Curated by CircuitSim

SiHB33N60E schematic symbol
Details

Manufacturer

Vishay


Part number

SiHB33N60E-GE3


Pins

3


Used in

No circuits


Added

Jul 2026

About this component

SiHB33N60E is an N-channel MOSFET rated for 600 V drain-source and 20 V gate-source operation, with 0.099 ohm on-resistance at 10 V gate drive.

Pins

Pins
3 pins
NumberNameDescription

1

D

Drain terminal.

2

G

Gate control terminal.

3

S

Source terminal.

Public circuits using this component

No public circuits are using this component yet.

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Official component · simulated with full SPICE accuracy · free during Open Beta.