PNP BJT

AREA

Area factor

Scales the resulting conductance and currents by this factor.

1

TEMP

Instance temperature

Operating temperature of the device. Overrides the TEMP setting in the simulation settings.

27 °C

IS

Transport saturation current

Current flow resulting from the diffusion of minority carriers. Strongly affects the collector current. Typical values between 1e-12 and 1e-18.

1e-16 A

BF

Max forward beta

An amplification factor between the base current and collector current.

100 A/A

NF

Forward current emission coefficient

Also known as ideality factor. Affects the exponential of the forward diffusion current. Typically varies between 0.5 and 2.

1

VAF

Forward early voltage

Affects the slope of the Ic/Vce curve in the active region.

1e30 V

IKF

Corner for forward beta high current roll-off

Corner for forward beta high current roll-off

1e30 A

ISE

BE-junction leakage saturation current

BE-junction leakage saturation current

0 A

NE

BE-junction leakage emission coefficient

BE-junction leakage emission coefficient

1.5

BR

Ideal maximum reverse beta

An amplification factor between the emitter current and base current in inverse-active region.

1

NR

Reverse current emission coefficient

Reverse current emission coefficient

1

VAR

Reverse early voltage

Reverse early voltage

1e30 V

IKR

Corner for reverse beta high current roll-off

Corner for reverse beta high current roll-off

1e30 A

ISC

BC-junction leakage saturation current

BC-junction leakage saturation current

0 A

NC

BC-junction leakage emission coefficient

BC-junction leakage emission coefficient

2

RB

Zero-bias base resistance

Zero-bias base resistance

0 Ω

IRB

Current where base resistance falls halfway to its minimum value

Current where base resistance falls halfway to its minimum value

1e30 A

RBM

Minimum base resistance at high currents

Minimum base resistance at high currents

0 Ω

RE

Emitter resistance

Emitter resistance

0 Ω

RC

Collector resistance

Collector resistance

0 Ω

CJE

Zero-bias BE-junction capacitance

Capacitance of BE junction with no external voltage applied. Affects the dynamic Cbe capacitance.

0 F

VJE

BE-junction built-in potential

Also known as built-in potential. It is the potential across the BE depletion region in thermal equilibrium.

0.75 V

MJE

BE-junction exponential factor

An indicator of the doping profile of the BE junction. Affects the BE capacitance.

0.33

TF

Ideal forward transit time

The forward transit time of the injected minority carriers through the neutral base.

0 s

XTF

Coefficient for bias dependence of TF

Coefficient for bias dependence of TF

0

VTF

Voltage describing VBC dependence of TF

Voltage describing VBC dependence of TF

1e30 V

ITF

High-current parameter for effect on TF

High-current parameter for effect on TF

0 A

PTF

Excess phase at F = 1/(2π·TF) Hz

Excess phase at F = 1/(2π·TF) Hz

0 °

CJC

Zero-bias BC-junction capacitance

Capacitance of BC junction with no external voltage applied. Affects the dynamic Cbc capacitance.

0 F

VJC

BC-junction built-in potential

Also known as built-in potential. It is the potential across the BC depletion region in thermal equilibrium. Affects the dynamic Cbc capacitance.

0.75 V

MJC

BC-junction grading coefficient

An indicator of the doping profile of the BC junction. Affects the Cbc capacitance.

0.33

XCJC

Fraction of BC-junction depletion capacitance connected to internal base node

Fraction of BC-junction depletion capacitance connected to internal base node

1

TR

Ideal reverse transit time

The reversed transit time of the injected minority carriers through the neutral base.

0 s

CJS

Zero-bias substrate capacitance

Zero-bias substrate capacitance

0 F

VJS

Substrate junction built-in potential

Substrate junction built-in potential

0.75 V

MJS

Substrate junction exponential factor

Substrate junction exponential factor

0

XTB

Forward and reverse beta temperature exponent

Forward and reverse beta temperature exponent

0

EG

Energy gap for temperature effect on IS

Energy gap for temperature effect on IS

1.11 eV

XTI

Temperature exponent for IS

Temperature exponent for IS

3

KF

Flicker noise coefficient

Flicker noise coefficient

0

AF

Flicker noise exponent

Flicker noise exponent

1

FC

Forward-bias depletion capacitance coefficient

Forward-bias depletion capacitance coefficient

0.5

TNOM

Parameter measurement temperature

Acts as the reference temperature to TEMP. Overrides the default value of 27°.

27 °C