N-channel MOSFET

L

Channel length

Channel length

100u m

W

Channel width

Channel width

100u m

M

Multiplicity

Number of MOSFETs in parallel.

1

AD

Drain area

Drain area

0 m²

AS

Source area

Source area

0 m²

PD

Drain perimeter

Drain perimeter

0 m

PS

Source perimeter

Source perimeter

0 m

NRD

Drain squares

Equivalent number of squares of the drain diffusions. Multiples the RSH (sheet resistance) parameter.

1

NRS

Source squares

Equivalent number of squares of the source diffusions.

1

TEMP

Instance temperature

Operating temperature of the device. Overrides the TEMP setting in the simulation settings.

27 °C

RD

Drain ohmic resistance

Drain ohmic resistance

0 Ω

RS

Series resistance

Series resistance

0 Ω

CBD

Body-drain junction capacitance

Capacitance of BD junction with no external voltage applied. Affects the dynamic Cdg capacitance.

0 F

CBS

Body-source junction capacitance

Capacitance of BS junction with no external voltage applied. Affects the dynamic Cdg capacitance.

0 F

IS

Saturation current

Current flow resulting from the diffusion of minority carriers. Strong affects the BS and BD currents.

1e-14 A

PB

Body-junction built-in potential

Also known as built-in potential. It is the potential across depletion regions in thermal equilibrium. Applies to both GD and GS junctions and ultimately controlling the Cbd and Cbs capacitance.

0.8 V

CGSO

Gate-source overlap capacitance

Gate-source overlap capacitance

0 F/m

CGDO

Gate-drain overlap capacitance

Gate-drain overlap capacitance

0 F/m

CGBO

Gate-bulk overlap capacitance

Gate-bulk overlap capacitance

0 F/m

RSH

Sheet resistance

Sheet resistance

0 Ω/sq.

CJ

Bottom junction capacitance per area

Scaled by the drain and source areas. Affects the CBD and CBS capacitance.

0 F/m²

MJ

Body-junction grading coefficient

An indicator of the doping profile of both the BD and BS junctions. It affects the Cbd and Cbs capacitance.

0.5

CJSW

Side junction capacitance per length

Scaled by the drain and source perimeters. Affects CBD and CBS capacitance.

0 F/m

MJSW

Side grading coefficient

An indicator of the sidewall doping profile. Affects the CBD and CBS capacitance.

0.33

JS

Bulk junction saturation current density

Saturation current density. Overrides bulk saturation current parameter IS if non-zero and drain area and source area are non-zero.

0 A/m²

TOX

Oxide thickness

Oxide thickness

4n m

NSS

Surface state density

Used to calculate VTO if it is not set.

0 1/cm²

TPG

Gate type

Used to calculate VTO if it is not set.

1

LD

Lateral diffusion

Lateral diffusion

0 m

U0

Surface mobility

Surface mobility

600 cm²/(V·s)

KF

Flicker noise coefficient

Flicker noise coefficient

0

AF

Flicker noise exponent

Flicker noise exponent

1

FC

Forward-bias depletion coefficient

Forward-bias depletion coefficient

0.5

TNOM

Parameter measurement temperature (TNOM)

Acts as the reference temperature to TEMP. Overrides the default value of 27°.

27 °C

VTO

Threshold voltage

The voltage above which the MOSFET begins to turn on. The actual threshold voltage is also a function of GAMMA, PHI, and the BS voltage (body effect).

0 V

KP

Process transconductance

Often represented as µnCox which is the the product of surface mobility, µn, and capacitance per gate, Cox. Strongly affects the drain current.

2e-5 A/V²

GAMMA

Body-effect parameter

Affects the threshold voltage when the BS voltage is non-zero.

0 √(V)

PHI

Surface inversion potential

Affects the threshold voltage when the BS voltage and GAMMA are non-zero.

0.6 V

LAMBDA

Channel length modulation

Affects the slope of the Id/Vds curve in the active region.

0 1/V