P-channel JFET

AREA

Area factor

Scales the resulting conductance and currents by this factor.

1

TEMP

Instance temperature

Operating temperature of the device. Overrides the TEMP setting in the simulation settings.

27 °C

RD

Drain ohmic resistance

Drain ohmic resistance

0 Ω

RS

Series resistance

Series resistance

0 Ω

CGS

Zero-bias GS-junction capacitance

Capacitance of GS junction with no external voltage applied. Affects the dynamic Cgs capacitance.

0 F

CGD

Zero-bias GD-junction capacitance

Capacitance of GD junction with no external voltage applied. Affects the dynamic Cdg capacitance.

0 F

PB

Gate junction potential

Also known as built-in potential. It is the potential across depletion regions in thermal equilibrium. Affects the dynamic Cbd and Cbs capacitances.

1 V

IS

Saturation current

Affects the gate-source and gate-drain currents.

1e-14 A

B

Doping tail parameter

For modeling velocity saturation.

1

KF

Flicker noise coefficient

Flicker noise coefficient

0

AF

Flicker noise exponent

Flicker noise exponent

1

FC

Forward-bias depletion coefficient

Forward-bias depletion coefficient

0.5

TNOM

Parameter measurement temperature (TNOM)

Acts as the reference temperature to TEMP. Overrides the default value of 27°.

27 °C

BETATCE

BETA exponential temperature coefficient

BETA exponential temperature coefficient

0 %/°C

VTOTC

VT0 temperature coefficient

VT0 temperature coefficient

0 V/°C

XTI

Saturation current temperature exponent

Saturation current temperature exponent

3

VT0

Zero-bias threshold voltage

The Vgs voltage at which the channel closes and the JFET switches off.

-2 V

BETA

Process transconductance

A constant relating Vgs and Vds to Ids.

100u A/V²

LAMBDA

Channel-length modulation

Affects the slope of the Id/Vds curve.

0 1/V