N-Channel GaAs MESFET

AREA

Area factor

Scales the resulting conductance and currents by this factor.

1

B

Doping tail parameter

For modeling velocity saturation.

0.3 1/V

RD

Drain ohmic resistance

Drain ohmic resistance

0 Ω

RS

Series resistance

Series resistance

0 Ω

CGS

Zero-bias GS-junction capacitance

Capacitance of GS junction with no external voltage applied. Affects the dynamic Cdg capacitance.

0 F

CGD

Zero-bias GD-junction capacitance

Capacitance of GD junction with no external voltage applied. Affects the dynamic Cdg capacitance.

0 F

PB

Gate junction potential

Also known as built-in potential. It is the potential across depletion regions in thermal equilibrium. Affects the dynamic Cbd and Cbs capacitances.

1 V

KF

Flicker noise coefficient

Flicker noise coefficient

0

AF

Flicker noise exponent

Flicker noise exponent

1

FC

Forward-bias depletion coefficient

Forward-bias depletion coefficient

0.5

IS

Saturation current

Affects the gate-source and gate-drain currents.

1e-14 A

RG

Gate ohmic resistance

Gate ohmic resistance

0 Ω

CDS

Zero-bias DS-junction capacitance

Capacitance of DS junction with no external voltage applied. Affects the dynamic Cds capacitance.

0 F

EG

Energy gap

Energy gap

1.11 eV

N

Emission coefficient

Affects the gate-source and gate-drain currents.

1

BETATCE

BETA exponential temperature coefficient

BETA exponential temperature coefficient

0 %/°C

TRD1

RD linear temperature coefficient

RD linear temperature coefficient

0 1/°C

TRG1

RG linear temperature coefficient

RG linear temperature coefficient

0 1/°C

TRS1

RS linear temperature coefficient

RS linear temperature coefficient

0 1/°C

VTOTC

VT0 temperature coefficient

VT0 temperature coefficient

0 V/°C

XTI

Saturation current temperature exponent

Saturation current temperature exponent

0

M

Junction grading coefficient

Junction grading coefficient

0.5

VDELTA

Capacitance transition voltage

Capacitance transition voltage

0.2 V

VMAX

Capacitance limiting voltage

Capacitance limiting voltage

0.5 V

TNOM

Parameter measurement temperature (TNOM)

Acts as the reference temperature to TEMP. Overrides the default value of 27°.

27 °C

T_MEASURED

Parameter measurement temperature (TMEASURED)

Same as TNOM. Cadence® PSpice® compliant.

27 °C

T_ABS

Model operating temperature (absolute)

Same as TEMP. Cadence® PSpice® compliant.

27 °C

T_REL_GLOBAL

Model operating temperature (relative to global)

Operating temperature relative to the global operating temperature. Cadence® PSpice® compliant.

0 °C

T_REL_LOCAL

Model operating temperature (relative to AKO)

Model operating temperature (relative to AKO)

0 °C

VT0

Pinch-off voltage

The Vgs voltage at which the channel closes and the JFET switches off.

-2 V

BETA

Process transconductance

A constant relating Vgs and Vds to Ids.

2.5m A/V²

ALPHA

Saturation voltage parameter

Affects the current in the saturation region.

2 1/V

LAMBDA

Channel-length modulation

Affects the slope of the Ic/Vce curve.

0 1/V