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5_5_5_Mittelpunktschaltung

FE

feslehrer

·

Created Nov 10, 2026

·

Updated Nov 10, 2026

Schematic preview for 5_5_5_Mittelpunktschaltung
Details

Components

4


Schematic

Yes


Simulation

Transient analysis


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Circuit notes

Mittelpunktschaltung


Arbeitsauftrag

  1. Starten Sie die Simulation.
    Warum ändert sich Udi/U1 nicht gegenüber der Einwegschaltung?
  2. Welche Beobachtung machen Sie zu UF?
  3. Bestimmen Sie die Pulsfrequenz fP der Gleichspannung Ud.

Legende

U1: Effektivwert der Trafospannung über beide Sekundärwicklungen
Udi: ideelle Leerlaufspannung (UdAV)
fP: Pulsfrequenz der Gleichspannung
UF: Diodenspannung in Flußrichtung

Kennzeichnung

M2U = Mittelpunktschaltung, Pulszahl 2, Ungesteuert

Components used

Components used
4 components
NameManufacturerMPNCountType

Diode

Generic

—

2

Official

Center-Tapped Transformer

Generic

—

1

Official

Resistor

Generic

—

1

Official

RMS AC Voltage Source

Generic

—

1

Official

SPICE netlist

* **************************************************
* Generated from CircuitSim Schematic
**************************************************
* net label L1 joins NET_005::component:node-7216812e-2923-46f4-a103-897d7f879240:T0 NET_005::node:junction-e5a710e4-2bfe-4eef-be00-f4417aa21645
* net label N joins NET_006::node:junction-0376c36a-d530-4e5d-b886-284d946fefeb NET_006::node:junction-e6f9e1ee-0694-4c09-9a7f-7360576e1783
X_R1 N4 N6 DIODE_25d079d4 IS=1e-14 RS=0 N=1 BV=1e30 IBV=100p CJO=0 VJ=1 M=0.5 TT=0 EG=1.11 XTI=3 KF=0 AF=1 FC=0.5 ISR=0 NR=2 IKF=1e30 TNOM=27 IC=0 TEMP=27
X_R2 N1 N6 DIODE_25d079d4 IS=1e-14 RS=0 N=1 BV=1e30 IBV=100p CJO=0 VJ=1 M=0.5 TT=0 EG=1.11 XTI=3 KF=0 AF=1 FC=0.5 ISR=0 NR=2 IKF=1e30 TNOM=27 IC=0 TEMP=27
R_RL N6 0 100K Resistor_1d9c8cf9a__R_RL
X_T1 N3 0 N4 N1 0 Param1P1STAPPED_2155554c PTurns=2.147K PNegativePolarity=0 STurns=224 SNegativePolarity=0
V_Unetz N3 0 dc 0 ac 1 0 distof1 0 0 distof2 0 0 sin ( 0 {230*1.414213562} 50 0 0 0 )
E_VP1 VP1 0 N3 0 1
E_VP2 VP2 0 N4 N1 1
E_VP3 VP3 0 N4 N6 1
E_VP4 VP4 0 N6 0 1

**************************************************
* Models and supporting definitions follow
**************************************************
* Source-compatible two-terminal junction diode
.subckt DIODE_25d079d4 A K params: IS=1e-14 RS=0 N=1 BV=1e30 IBV=100p CJO=0 VJ=1 M=0.5 TT=0 EG=1.11 XTI=3 KF=0 AF=1 FC=0.5 ISR=0 NR=2 IKF=1e30 TNOM=27 IC=0 TEMP=27
    .model DIODE_25d079d4_CORE D(IS={IS} RS={RS} N={N} BV={BV} IBV={IBV} CJO={CJO} VJ={VJ} M={M} TT={TT} EG={EG} XTI={XTI} KF={KF} AF={AF} FC={FC} ISR={ISR} NR={NR} IKF={IKF} TNOM={TNOM})
    DCORE A K DIODE_25d079d4_CORE IC={IC} TEMP={TEMP}
.ends DIODE_25d079d4
.model Resistor_1d9c8cf9a__R_RL r(tc1=0 tc2=0 tnom=27)
.subckt Param1P1STAPPED_2155554c p1pos p1neg s1pos s1neg s1tap params: PTurns=10 PNegativePolarity=0 STurns=1 SNegativePolarity=0
    .param PTurnsEffective = {PTurns * ((PNegativePolarity < 0.5) ? 1 : -1)}

    .param STurnsEffective = {STurns * ((SNegativePolarity < 0.5) ? 1 : -1)}

    .param turns_per_coil = {STurnsEffective/2}
    G1 p1pos p1neg value={-1/PTurnsEffective*(turns_per_coil*I(Es1) + turns_per_coil*I(Es2))}
    Es1 s1pos s1tap value={V(p1pos,p1neg)*turns_per_coil/PTurnsEffective}
    Es2 s1tap s1neg value={V(p1pos,p1neg)*turns_per_coil/PTurnsEffective}
.ENDS

**************************************************
* Simulation settings
**************************************************
.tran 400u 0.06 0 400u
.save V(VP2) V(VP4) V(VP3) V(VP1)
.end

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